Space-charge recombination currents and their influence on the dc current gain of AlGaAs/GaAs Pnp heterojunction bipolar transistors
نویسندگان
چکیده
The effects of Shockley–Read–Hall, Auger, radiative, and intrinsic surface base recombination processes in the emitter-base space-charge region on the current gain of Pnp AlGaAs/GaAs heterojunction bipolar transistors are analyzed. At low forward emitter-base bias, the current gain of a typical Pnp AlGaAs/GaAs heterojunction bipolar transistor is shown to be reduced substantially below its value calculated while neglecting recombination currents in the emitter-base space-charge region. Excellent agreement between theory and experiment is found for the current gain variation versus collector current density for a Pnp device recently reported by Slater et al. @IEEE Electron Device Lett. 15, 91 ~1994!#. © 1999 American Institute of Physics. @S0021-8979~99!03324-1#
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